C. CASTRO-PEÑAHERRERA, C. SERRA JIMENEZ
In the present article, are exposed the results obtained in the design of a linear microwave amplifier for X-band carriers. Fundamentally, shows the contributions made in the techniques of implementation of high frequency amplifier circuits based on transistors of GaN HEMT technology; as well as the elaboration of polarization lines and adaptation ports, stability control and gains in the desired frequency range. It should be noted the use of free software tools for the characterization of the transistor through its S parameters and the geometry of the transmission lines of the circuit.
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Published on 01/01/2018
Volume 9, Issue 1, 2018DOI: 10.29019/enfoqueute.v9n1.231Licence: CC BY-NC-SA license
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